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  may 2006 rev 1 1/8 STTH1R02 ultrafast recovery diode main product characteristics features and benefits very low conduction losses negligible switching losses low forward and reverse recovery times high junction temperature description the STTH1R02 uses st's new 200 v planar pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. packaged in do-41 and sma, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. order codes i f(av) 1.5 a v rrm 200 v t j (max) 175 c v f (typ) 0.7 v t rr (typ) 15 ns part number marking STTH1R02 STTH1R02 STTH1R02rl STTH1R02 STTH1R02a r1a k a k k k k k k k k a a a a a a a a sma STTH1R02a k a do-41 STTH1R02 www.st.com
characteristics STTH1R02 2/8 1 characteristics to evaluate the conduction losses use the following equation: p = 0.68 x i f(av) + 0.08 i f 2 (rms) table 1. absolute ratings (limiting values at t j = 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i frm repetitive peak forward current do-41 (1) t p = 5 s, f = 5 khz 30 a sma i f(rms) rms forward current do-41 50 a sma i f(av) average forward current, = 0.5 do-41 t lead = 110 c 1.5 a sma t c = 110 c i fsm surge non repetitive forward current t p = 10 ms sinusoidal 60 a t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature do-41 (1) 175 c sma 150 1. on infinite heatsink with 10 mm lead length table 2. thermal parameters symbol parameter value unit r th(j-c) junction to lead lead length = 10 mm on infinite heatsink do-41 45 c/w junction to case sma 30 table 3. static electrical characteristics symbol parameter test conditions min. typ max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 3 a t j = 125 c 2 20 v f (2) forward voltage drop t j = 25 c i f = 4.5 a 1.2 v t j = 25 c i f = 1.5 a 0.89 1 t j = 100 c 0.76 0.85 t j = 150 c 0.70 0.80 1. pulse test: t p = 5 ms, < 2 % 2. pulse test: t p = 380 s, < 2 %
STTH1R02 characteristics 3/8 table 4. dynamic characteristics symbol parameter test conditions min. typ max. unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 23 30 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 15 20 i rm reverse recovery current i f = 1.5 a, di f /dt = -200 a/s, v r = 160 v, t j = 125 c 34 a t fr forward recovery time i f = 1.5 a, di f /dt = 100 a/s v fr = 1.1 x v fmax , t j = 25 c 50 ns v fp forward recovery voltage i f = 1.5 a, di f /dt = 100 a/s, t j = 25 c 2.1 v figure 1. peak current versus duty cycle figure 2. forward voltage drop versus forward current (typical values) 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i m (a) t d =tp/t tp i m t =tp/t tp i m p = 2 w p = 2 w p = 1 w p = 1 w p = 5 w p = 5 w 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 i fm (a) t j =25c t j =150c v fm (v) figure 3. forward voltage drop versus forward current (maximum values) figure 4. relative variation of thermal impedance junction to case versus pulse duration (sma) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 i fm (a) t j =25c t j =150c v fm (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z th(j-a) /r th(j-a) single pulse sma s cu =1cm2 t p (s)
characteristics STTH1R02 4/8 figure 5. relative variation of thermal impedance junction to case versus pulse duration (do-41) figure 6. junction capacitance versus reverse applied voltage (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z th(j-a) /r th(j-a) single pulse do-41 lleads=10mm t p (s) 1 10 100 1 10 100 1000 c (pf) f=1mhz v osc =30mv rms t j =25c v r (v) figure 7. reverse recovery charges versus di f /dt (typical values) figure 8. reverse recovery time versus di f /dt (typical values) 0 10 20 30 40 50 60 70 80 10 100 1000 q rr (nc) i f =1.5a v r =160v t j =125c t j =25c di f /dt(a/s) 0 10 20 30 40 50 60 70 80 10 100 1000 t rr (ns) i f =1.5a v r =160v t j =125c t j =25c di f /dt(a/s) figure 9. peak reverse recovery curent versus di f /dt (typical values) figure 10. dynamic parameters versus junction temperature 0 1 2 3 4 5 6 7 8 10 100 1000 i rm (a) i f =1.5a v r =160v t j =125c t j =25c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 q rr ;i rm [t j ]/q rr ;i rm [t j =125c] i rm q rr i f =1.5a v r =160v t j (c)
STTH1R02 ordering information scheme 5/8 2 ordering information scheme figure 11. thermal resistance, junction to ambient, versus copper surface under each lead - sma (epoxy fr4, e cu = 35 m) figure 12. thermal resistance, junction to ambient, versus copper surface under each lead - do-41 (epoxy fr4, e cu = 35 m) 0 20 40 60 80 100 120 012345 r th(j-a) (c/w) sma s cu (cm2) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r th(j-a) (c/w) do-15 s cu (cm2) stth 1 r 02 xx ultrafast switching diode average forward current 1 = 1 a 02 = 200 v blank = do-41 in ammopack rl = do-41 in tape and reel a = sma in tape and reel model r repetitive peak reverse voltage package
package information STTH1R02 6/8 3 package information epoxy meets ul94, v0 table 5. do-41 dimensions figure 13. sma footprint (dimensions in mm) in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. ref. dimensions millimeters inches min. max. min. max. a 4.1 5.20 0.160 0.205 b 2 2.71 0.080 0.107 c25.4 1 d 0.712 0.863 0.028 0.034 table 6. sma dimensions ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.03 0.075 0.080 a2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 e 4.80 5.60 0.189 0.220 e1 3.95 4.60 0.156 0.181 d 2.25 2.95 0.089 0.116 l 0.75 1.60 0.030 0.063 ?d ?b a cc 1.67 4.94 1.73 1.48 1.73
STTH1R02 ordering information 7/8 4 ordering information 5 revision history part number marking package weight base qty delivery mode STTH1R02 STTH1R02 do-41 0.34 g 2000 ammopack STTH1R02rl STTH1R02 do-41 0.34 g 5000 tape and reel STTH1R02a r1a sma 0.068 g 5000 tape and reel date revision description of changes 03-may-2006 1 first issue
STTH1R02 8/8 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorize representative of st, st products are not designed, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems, where failure or malfunction may result in personal injury, death, or severe property or environmental damage. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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